Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

摘要

GaMnAs thin films with different Mn doping concentrations were grown viamolecular beam epitaxy using a substrate temperature of 250 {\deg}C. The thinfilms were investigated using photoluminescence (PL) measurements from 8 to 300K. Transitions involving Mn acceptors were identified and a binding energy of~0.1 eV was found. A Mn doping concentration dependent PL spectrum was found tolend insight into the film quality at a local level. Temperature dependent PLstudies show that the doping related emissions drop faster in energy than otherpeaks with increasing temperature, indicating that they are more sensitive tochanges in the surrounding environment.